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| SMD Type Silicon NPN Epitaxial 2SC4155A Transistors IC Features Small collector to emitter saturation voltage. VCE(sat)=0.3max Excellent lineality of dc forward current gain. Supper mini package for easy mounting. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 6 200 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter break down voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Testconditons Min 50 0.1 0.1 120 820 0.3 200 4 15 V MHz pF dB Typ Max Unit V iA iA V(BR)CEO IC=100iA,RBE= ICBO IEBO hFE VCB = 50 V, IE = 0 VEB = 4 V, IC = 0 VCE = 6 V, IC = 1 mA VCE (sat) IC = 100 mA, IB = 10 mA fT Cob NF VCE = 6 V, IC = -10 mA VCB = 6 V, IE = 0, f = 1 MHz VCB = 6 V, IE = 0, f = 1 MHz, Rg=2kU hFE Classification Marking hFE HQ 120 270 HR 180 390 HS 270 560 HT 390 820 www.kexin.com.cn 1 |
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